EXPLANATION OF LIGHT-INDUCED ELECTRON-SPIN-RESONANCE IN A-SI-H - DANGLING BONDS WITH A POSITIVE CORRELATION-ENERGY

被引：73

作者：

STREET, RA

BIEGELSEN, DK

机构：

来源：

关键词：

D O I：

10.1016/0022-3093(80)90278-1

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：651 / 656

页数：6

共 12 条

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[4] ENGEMANN D, 1976, AIP C P, V31, P37
[5] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON
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[6] OPTICALLY INDUCED ELECTRON-SPIN RESONANCE IN DOPED AMORPHOUS SILICON
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[7] LUMINESCENCE STUDIES OF PLASMA-DEPOSITED HYDROGENATED SILICON
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[8] STREET RA, UNPUBLISHED
[9] STREET RA, PHIL MAG
[10] STREET RA, 1978, I PHYS C SER, V43, P1139