DEGENERATE 4-WAVE MIXING NEAR THE BAND-GAP OF SEMICONDUCTORS

被引：95

作者：

JAIN, RK

KLEIN, MB

机构：

[1] Hughes Research Laboratories, Malibu

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 06期

关键词：

D O I：

10.1063/1.91158

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a theoretical calculation and experimental data on the effective third-order susceptibilities χ(3) for degenerate four-wave mixing near the band gap of semiconductors. The closeness of the calculated and experimental values for the effective χ(3) in silicon at 1.06 μm indicates the utility of our simple calculation. The large values of χ(3) indicate the possibility of high-efficiency degenerate four-wave mixing in semiconductors, especially at longer wavelengths.

引用

页码：454 / 456

页数：3

共 22 条

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