HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR-DEVICES

[1] Baglin J E E, 1978, THIN FILMS INTERDIFF

[2] CHEUNG N, 1980, 1979 P S THIN FILM I

[3] TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J]. THIN SOLID FILMS, 1979, 60 (02) : 237 - 247

[4] EFFECTS OF NITROGEN METHANE + OXYGEN ON STRUCTURE + ELECTRICAL PROPERTIES OF THIN TANTALUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 402 - &

[5] Gerstenberg D., 1963, ANN PHYSIK, V11, P354

[6] METALLIZATION IN MICROELECTRONICS [J]. THIN SOLID FILMS, 1977, 45 (01) : 69 - 84

[7] APPLICATION OF TI-W BARRIER METALLIZATION FOR INTEGRATED-CIRCUITS [J]. THIN SOLID FILMS, 1978, 53 (02) : 117 - 128

[8] RESISTIVITY OF BIAS-SPUTTERED TI-W FILMS [J]. THIN SOLID FILMS, 1979, 64 (01) : 17 - 23

[9] HILL M, 1980, SOLID STATE TECHNOL, V23, P53

[10] Howard J. K., 1978, IBM Technical Disclosure Bulletin, V20, P3477

[1] Baglin J E E, 1978, THIN FILMS INTERDIFF

[2] CHEUNG N, 1980, 1979 P S THIN FILM I

[3] TIN AS A DIFFUSION BARRIER IN THE TI-PT-AU BEAM-LEAD METAL SYSTEM [J]. THIN SOLID FILMS, 1979, 60 (02) : 237 - 247

[4] EFFECTS OF NITROGEN METHANE + OXYGEN ON STRUCTURE + ELECTRICAL PROPERTIES OF THIN TANTALUM FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 402 - &

[5] Gerstenberg D., 1963, ANN PHYSIK, V11, P354

[6] METALLIZATION IN MICROELECTRONICS [J]. THIN SOLID FILMS, 1977, 45 (01) : 69 - 84

[7] APPLICATION OF TI-W BARRIER METALLIZATION FOR INTEGRATED-CIRCUITS [J]. THIN SOLID FILMS, 1978, 53 (02) : 117 - 128

[8] RESISTIVITY OF BIAS-SPUTTERED TI-W FILMS [J]. THIN SOLID FILMS, 1979, 64 (01) : 17 - 23

[9] HILL M, 1980, SOLID STATE TECHNOL, V23, P53

[10] Howard J. K., 1978, IBM Technical Disclosure Bulletin, V20, P3477