CHARACTERISTICS OF THE METAL-INSULATOR SEMICONDUCTOR STRUCTURE - AIN-SI

被引:25
作者
MORITA, M
ISOGAI, S
TSUBOUCHI, K
MIKOSHIBA, N
机构
关键词
D O I
10.1063/1.92129
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:50 / 52
页数:3
相关论文
共 8 条
  • [1] Arnold H., 1976, Kristall und Technik, V11, P17, DOI 10.1002/crat.19760110104
  • [2] OPTICAL-PROPERTIES OF ALUMINUM NITRIDE PREPARED BY CHEMICAL AND PLASMACHEMICAL VAPOR-DEPOSITION
    BAUER, J
    BISTE, L
    BOLZE, D
    [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 39 (01): : 173 - 181
  • [3] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163
  • [4] AUTOMATIC C-V PLOTTER
    FORWARD, KE
    HASEGAWA, H
    HARTNAGEL, HL
    [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1975, 8 (06): : 487 - 489
  • [5] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM
    MANASEVIT, HM
    ERDMANN, FM
    SIMPSON, WI
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +
  • [6] MORITA M, UNPUBLISHED
  • [7] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
    NICOLLIA.EH
    GOETZBER.A
    [J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +
  • [8] EPITAXIALLY GROWN AIN AND ITS OPTICAL BAND GAP
    YIM, WM
    STOFKO, EJ
    ZANZUCCHI, PJ
    PANKOVE, JI
    ETTENBERG, M
    GILBERT, SL
    [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 292 - 296