BISTABLE SWITCHING IN A NONLINEAR BRAGG REFLECTOR

被引：24

作者：

ACKLIN, B

CADA, M

HE, J

DUPERTUIS, MA

机构：

[1] TECH UNIV NOVA SCOTIA,DEPT ELECT ENGN,HALIFAX B3J 2X4,NS,CANADA

[2] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,CH-1015 LAUSANNE,SWITZERLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 16期

关键词：

D O I：

10.1063/1.110802

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Numerical simulations and experimental results are reported on bistable switching in a semiconductor nonlinear vertical Bragg reflector. An improved structure with an additional linear rear mirror and a phase-adjusting layer was predicted to have lower threshold for bistability than a Fabry-Perot type device. The experimental observation of bistable switching in a nonlinear Bragg reflector is reported. Achieved threshold was comparable with a nonlinear Fabry-Perot device; the simpler structure of a nonlinear Bragg device may represent an advantage with respect to growth tolerances.

引用

页码：2177 / 2179

页数：3

共 8 条

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