OPTICAL BISTABILITY IN SEMICONDUCTORS

被引：391

作者：

GIBBS, HM

MCCALL, SL

VENKATESAN, TNC

GOSSARD, AC

PASSNER, A

WIEGMANN, W

机构：

[1] Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 06期

关键词：

D O I：

10.1063/1.91157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical bistability has been observed in a semiconductor for the first time. The bistable etalon consists of a GaAlAs-GaAs-GaAlAs molecular-beam- epitaxially-grown sandwich with 90% reflectivity coatings. The bistability is primarily dispersive with the nonlinear refractive index arising from light-induced changes in exciton absorption. Using light of frequency just below the exciton peak, we observed bistability from 5 to 120°K with 40-ns turn-off and subnanosecond turn-on times with 1 mW/μm2 holding intensity.

引用

页码：451 / 453

页数：3

共 9 条

[1] OPTICAL MODULATION BY OPTICAL TUNING OF A CAVITY
GIBBS, HM
VENKATESAN, TNC
MCCALL, SL
PASSNER, A
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (08) : 511 - 514
[2] DIFFERENTIAL GAIN AND BISTABILITY USING A SODIUM-FILLED FABRY-PEROT-INTERFEROMETER
GIBBS, HM
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VENKATESAN, TNC
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[3] SATURATION OF THE FREE EXCITON RESONANCE IN GAAS
GIBBS, HM
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WIEGMANN, W
VENKATESAN, TNC
[J]. SOLID STATE COMMUNICATIONS, 1979, 30 (05) : 271 - 275
[4] HASSAN SS, 1978, OPT COMMUN, V27, P480, DOI 10.1016/0030-4018(78)90428-5
[5] MCCALL SL, 1978, J OPT SOC AM, V68, P1378
[6] MCCALL SL, UNPUBLISHED
[7] DYNAMICS OF PHOTOEXCITED GAAS BAND-EDGE ABSORPTION WITH SUBPICOSECOND RESOLUTION
SHANK, CV
FORK, RL
LEHENY, RF
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[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (02) : 112 - 115
[8] SZOKE A, 1969, APPL PHYS LETT, V15, P376, DOI 10.1063/1.1652866
[9] OPTICAL BISTABILITY AND DIFFERENTIAL GAIN BETWEEN 85 AND 296DEGREESK IN A FABRY-PEROT CONTAINING RUBY
VENKATESAN, TNC
MCCALL, SL
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 282 - 284

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