SATURATION OF THE FREE EXCITON RESONANCE IN GAAS

被引：80

作者：

GIBBS, HM ^{[1
]}

GOSSARD, AC ^{[1
]}

MCCALL, SL ^{[1
]}

PASSNER, A ^{[1
]}

WIEGMANN, W ^{[1
]}

VENKATESAN, TNC ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LABS,HOLMDEL,NJ 07733

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 05期

关键词：

D O I：

10.1016/0038-1098(79)90075-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transmission of 500 ns pulses through GaAs-AlGaAs heterostructures has been studied as a function of light intensity (0.015 to 50 kW/cm2) and wavelength (810 to 840 nm). The intrinsic exciton absorption (λ=818 nm at 10°K) can be modeled by the sum of a small unsaturable background and a dominant term which saturates as a Bloch resonance with a saturatiom parameter of about 150 W/cm2. © 1979.

引用

页码：271 / 275

页数：5

共 21 条

[1] ELECTRON-HOLE LIQUIDS IN SEMICONDUCTORS
BRINKMAN, WF
RICE, TM
[J]. PHYSICAL REVIEW B, 1973, 7 (04): : 1508 - 1523
[2] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB
BURSTEIN, E
[J]. PHYSICAL REVIEW, 1954, 93 (03): : 632 - 633
[3] CHO AY, 1971, J VAC SCI TECHNOL, V8, P531
[4] DIRECT OBSERVATION OF A DYNAMIC BURSTEIN SHIFT IN A GAAS-GE PLATELET LASER
DAPKUS, PD
HOLONYAK, N
BURNHAM, RD
KEUNE, DL
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (03) : 93 - &
[5] SPONTANEOUS AND STIMULATED CARRIER LIFETIME (77 DEGREES K) IN A HIGH-PURITY, SURFACE-FREE GAAS EPITAXIAL LAYER
DAPKUS, PD
HOLONYAK, N
BURNHAM, RD
KEUNE, DL
BURD, JW
LAWLEY, KL
WALLINE, RE
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) : 4194 - +
[6] DINGLE R, 1975, J APPL PHYS, V46, P4313
[7] DIFFERENTIAL GAIN AND BISTABILITY USING A SODIUM-FILLED FABRY-PEROT-INTERFEROMETER
GIBBS, HM
MCCALL, SL
VENKATESAN, TNC
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (19) : 1135 - 1138
[8] GIBBS HM, UNPUBLISHED
[9] GOEBEL EO, 1978, PHYS REV B, V17, P4775
[10] GAAS-GAXAL1-XAS HETEROSTRUCTURE INJECTION LASERS WHICH EXHIBIT LOW THRESHOLDS AT ROOM TEMPERATURE
HAYASHI, I
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) : 150 - &

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