SATURATION OF THE FREE EXCITON RESONANCE IN GAAS

被引：80

作者：

GIBBS, HM ^{[1
]}

GOSSARD, AC ^{[1
]}

MCCALL, SL ^{[1
]}

PASSNER, A ^{[1
]}

WIEGMANN, W ^{[1
]}

VENKATESAN, TNC ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LABS,HOLMDEL,NJ 07733

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 05期

关键词：

D O I：

10.1016/0038-1098(79)90075-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The transmission of 500 ns pulses through GaAs-AlGaAs heterostructures has been studied as a function of light intensity (0.015 to 50 kW/cm2) and wavelength (810 to 840 nm). The intrinsic exciton absorption (λ=818 nm at 10°K) can be modeled by the sum of a small unsaturable background and a dominant term which saturates as a Bloch resonance with a saturatiom parameter of about 150 W/cm2. © 1979.

引用

页码：271 / 275

页数：5