ROUGHNESS OF THE SILICON (001)/SIO2 INTERFACE

被引：36

作者：

TANG, MT

EVANSLUTTERODT, KW

HIGASHI, GS

BOONE, T

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use synchrotron x-ray diffraction to characterize the roughness of the buried Si(001)/SiO2 interface, for three types of oxide, without modification of the.interface. We show that the thermal oxide interface is 0.5 +/- 0.1 times as rough as the native oxide interface, suggesting that the oxide growth decreases the roughness slightly. We also measure the roughness of a chemically grown oxide interface.

引用

页码：3144 / 3146

页数：3

共 16 条

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