AN ELECTRON-MICROSCOPE INVESTIGATION OF THE EFFECT OF PHOSPHORUS DOPING ON THE PLASMA-ETCHING OF POLYCRYSTALLINE SILICON

被引：4

作者：

IRENE, EA

TIERNEY, E

BLUM, JM

ALIOTTA, CF

LAMBERTI, AC

GINSBERG, BJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 09期

关键词：

D O I：

10.1149/1.2127777

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1971 / 1974

页数：4

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[1] OBSERVATION OF IMPURITY REDUSTRIBUTION DURING THERMAL OXIDATION OF SILICON USING MOS STRUCTURE
DEAL, BE
GROVE, AS
SNOW, EH
SAH, CT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) : 308 - &
[2] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON
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MASTERS, BJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &
[3] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON
GROVE, AS
SAH, CT
LEISTIKO, O
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) : 2695 - &
[4] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON
IRENE, EA
TIERNEY, E
DONG, DW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) : 705 - 713