PRODUCTION OF CDS AND CDSE EPITAXIAL LAYERS FROM VAPOR-PHASE

[1] Aitkhozhin S. A., 1969, Kristallografiya, V14, P373

[2] EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 401 - 407

[3] Curtis B. J., 1970, Journal of Crystal Growth, V6, P269, DOI 10.1016/0022-0248(70)90079-5

[4] DIJK H, 1966, CRYST GROWTH, P531

[5] GALLI G, 1966, J ELECTROCHEM SOC, V113, pC62

[6] Heyraud J. C., 1968, Journal of Crystal Growth, V2, P405, DOI 10.1016/0022-0248(68)90037-7

[7] Kleber W., 1967, KRISTALL TECHNIK, V2, P327

[8] GROWTH AND CRYSTAL STRUCTURES IN HETEROEPITAXIAL CDS DEPOSITED ON GAP [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 10 (02) : 191 - &

[9] OSAMU I, 1969, JPN J APPL PHYS, V8, P642

[10] PHILIPS NV, 1967, Patent No. 6607800

[1] Aitkhozhin S. A., 1969, Kristallografiya, V14, P373

[2] EPITAXIAL GROWTH AND PROPERTIES OF ZNTE-CDS HETEROJUNCTIONS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (05) : 401 - 407

[3] Curtis B. J., 1970, Journal of Crystal Growth, V6, P269, DOI 10.1016/0022-0248(70)90079-5

[4] DIJK H, 1966, CRYST GROWTH, P531

[5] GALLI G, 1966, J ELECTROCHEM SOC, V113, pC62

[6] Heyraud J. C., 1968, Journal of Crystal Growth, V2, P405, DOI 10.1016/0022-0248(68)90037-7

[7] Kleber W., 1967, KRISTALL TECHNIK, V2, P327

[8] GROWTH AND CRYSTAL STRUCTURES IN HETEROEPITAXIAL CDS DEPOSITED ON GAP [J]. JOURNAL OF CRYSTAL GROWTH, 1971, 10 (02) : 191 - &

[9] OSAMU I, 1969, JPN J APPL PHYS, V8, P642

[10] PHILIPS NV, 1967, Patent No. 6607800