FORMATION OF COSI2 ON STRAINED SI0.8GE0.2 USING A SACRIFICIAL SI LAYER

被引：10

作者：

DONATON, RA

KOLODINSKI, S

CAYMAX, M

ROUSSEL, P

BENDER, H

BRIJS, B

MAEX, K

机构：

[1] IMEC, B3001 Leuven

来源：

APPLIED SURFACE SCIENCE | 1995年 / 91卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(95)00098-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Formation of CoSi2 using a sacrificial Si layer on strained Si0.8Ge0.2 has been investigated. It has been observed that this capping layer plays an important role in the silicide quality and in keeping the strain of the SiGe layer. When the Si layer is totally consumed acid the silicide touches the SiGe layer, the SiGe layer relaxes and the resulting film has a high sheet resistance. On the other hand, if the sacrificial Si layer is thick enough to avoid this reaction a good quality cobalt disilicide can be formed and the SiGe layer remains strained.

引用

页码：77 / 81

页数：5

共 12 条

[1]

ALDRICH DB, 1994, MATER RES SOC SYMP P, V320, P305

[2]

ASHBURN SP, 1994, MATER RES SOC SYMP P, V320, P311

[3] COMPOUND FORMATION AT THE INTERACTION OF PD WITH STRAINED LAYERS OF SI1-XGEX EPITAXIALLY GROWN ON SI(100) [J].