STRAIN CHARACTERIZATION OF COSI2/N-SI0.9GE0.1/P-SI HETEROSTRUCTURES

被引：30

作者：

NUR, O

WILLANDER, M

RADAMSON, HH

SARDELA, MR

HANSSON, GV

PETERSSON, CS

MAEX, K

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,SEMICOND PHYS GRP,S-58183 LINKOPING,SWEDEN

[2] ROYAL INST TECHNOL,DEPT SOLID STATE ELECTR,S-16421 KISTA,SWEDEN

[3] IMC,LOUVAIN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 04期

关键词：

D O I：

10.1063/1.111122

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1-xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional transmission electron microscopy. The results show that in order to keep the strain in Si1-xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low-current gain (beta).

引用

页码：440 / 442

页数：3

共 13 条

[1] SCHOTTKY-COLLECTOR VERTICAL PNM BIPOLAR-TRANSISTOR [J].