KINETICS OF DOPANT INCORPORATION USING A LOW-ENERGY ANTIMONY ION-BEAM DURING GROWTH OF SI(100) FILMS BY MOLECULAR-BEAM EPITAXY

被引：66

作者：

NI, WX

KNALL, J

HASAN, MA

HANSSON, GV

SUNDGREN, JE

BARNETT, SA

MARKERT, LC

GREENE, JE

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.40.10449

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10449 / 10459

页数：11

共 33 条

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[6]

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[10]

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