THE INTERACTION OF SB4 MOLECULAR-BEAMS WITH SI(100) SURFACES - MODULATED-BEAM MASS-SPECTROMETRY AND THERMALLY STIMULATED DESORPTION STUDIES

被引：113

作者：

BARNETT, SA

WINTERS, HF

GREENE, JE

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] IBM CORP,RES LAB,SAN JOSE,CA 95193

来源：

SURFACE SCIENCE | 1986年 / 165卷 / 2-3期

关键词：

D O I：

10.1016/0039-6028(86)90809-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：303 / 326

页数：24

共 18 条

[1]

ARTHUR JR, 1967, 27TH P ANN C PHYS EL, P188

[2] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].

BAJOR, G ;

GREENE, JE .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1579-1582

[3] SI MOLECULAR-BEAM EPITAXY - A MODEL FOR TEMPERATURE-DEPENDENT INCORPORATION PROBABILITIES AND DEPTH DISTRIBUTIONS OF DOPANTS EXHIBITING STRONG SURFACE SEGREGATION [J].

BARNETT, SA ;

GREENE, JE .

SURFACE SCIENCE, 1985, 151 (01) :67-90

[4] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J].

BEAN, JC .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :654-656

[5]

COHEN SA, 1984, MATER RES SOC S P, V23, P321

[6]

DRESSER MJ, 1974, SURFACE SCI, V42, P277

[7] OBSERVATION OF ADSORPTION AND CRYSTAL NUCLEATION BY MASS-SPECTROMETRIC TECHNIQUES [J].

HUDSON, JB ;

SANDEJAS, JS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1967, 4 (05) :230-&

[8]

HULTGREN R, 1963, SELECTED VALUES THER

[9] ANTIMONY ADSORPTION ON SILICON [J].

METZGER, RA ;

ALLEN, FG .

SURFACE SCIENCE, 1984, 137 (2-3) :397-411

[10] EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH [J].

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) :931-940

← 1 2 →