MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY

被引：36

作者：

BAJOR, G ^{[1
]}

GREENE, JE ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.332140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1579 / 1582

页数：4

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