ANTIMONY ADSORPTION ON SILICON

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] GROWTH OF BISMUTH LAYERS ON SI(100) SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : 553 - 560

[3] KOENIG V, 1981, J CRYST GROWTH, V52, P151

[4] KOENIG V, 1979, J VACUUM SCI TECHNOL, V26, P985

[5] PHYSICAL METHODS USED FOR CHARACTERIZATION OF MODES OF EPITAXIAL-GROWTH FROM VAPOR-PHASE [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (02) : 197 - 222

[6] METZGER RA, 1983, THESIS UCLA

[7] METZGER RA, UNPUB J APPL PHYS

[8] AN INFLUENCE OF THE 1ST ADLAYER STRUCTURE ON THE STICKING COEFFICIENT OF THE SUCCESSIVE ADSORPTION IN A SYSTEM OF BISMUTH ON SILICON(111) SURFACE [J]. SURFACE SCIENCE, 1981, 103 (2-3) : 563 - 575

[9] KINETICS OF ANTIMONY DOPING IN SILICON MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03): : 423 - 428

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] GROWTH OF BISMUTH LAYERS ON SI(100) SURFACES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : 553 - 560

[3] KOENIG V, 1981, J CRYST GROWTH, V52, P151

[4] KOENIG V, 1979, J VACUUM SCI TECHNOL, V26, P985

[5] PHYSICAL METHODS USED FOR CHARACTERIZATION OF MODES OF EPITAXIAL-GROWTH FROM VAPOR-PHASE [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 44 (02) : 197 - 222

[6] METZGER RA, 1983, THESIS UCLA

[7] METZGER RA, UNPUB J APPL PHYS

[8] AN INFLUENCE OF THE 1ST ADLAYER STRUCTURE ON THE STICKING COEFFICIENT OF THE SUCCESSIVE ADSORPTION IN A SYSTEM OF BISMUTH ON SILICON(111) SURFACE [J]. SURFACE SCIENCE, 1981, 103 (2-3) : 563 - 575

[9] KINETICS OF ANTIMONY DOPING IN SILICON MOLECULAR-BEAM EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03): : 423 - 428