KINETICS OF ANTIMONY DOPING IN SILICON MOLECULAR-BEAM EPITAXY

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[3] SOME NEW TECHNIQUES IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) APPLICATION TO SURFACE-STRUCTURE STUDIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) : 891 - 908

[4] SILICON EPITAXIAL WAFER WITH ABRUPT INTERFACE BY 2-STEP EPITAXIAL-GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1523 - 1531

[5] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613

[6] SI-MBE - GROWTH AND SB DOPING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 985 - 989

[7] MOLECULAR-BEAM EPITAXY OF SILICON - EFFECTS OF HEAVY SB DOPING [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 151 - 158

[8] Si Molecular Beam Epitaxy (n on n(+)) with Wide Range Doping Control [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1795 - 1802

[9] Stull D.R., 1956, THERMODYNAMIC PROPER, V18

[10] EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 703 - 708

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[3] SOME NEW TECHNIQUES IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION (RHEED) APPLICATION TO SURFACE-STRUCTURE STUDIES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (06) : 891 - 908

[4] SILICON EPITAXIAL WAFER WITH ABRUPT INTERFACE BY 2-STEP EPITAXIAL-GROWTH TECHNIQUE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (11) : 1523 - 1531

[5] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613

[6] SI-MBE - GROWTH AND SB DOPING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 985 - 989

[7] MOLECULAR-BEAM EPITAXY OF SILICON - EFFECTS OF HEAVY SB DOPING [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) : 151 - 158

[8] Si Molecular Beam Epitaxy (n on n(+)) with Wide Range Doping Control [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1795 - 1802

[9] Stull D.R., 1956, THERMODYNAMIC PROPER, V18

[10] EFFECT OF GROWTH TEMPERATURE ON SI MBE FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : 703 - 708