SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY

被引：125

作者：

IYER, SS

METZGER, RA

ALLEN, FG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 09期

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D O I：

10.1063/1.329494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5608 / 5613

页数：6

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