MOLECULAR-BEAM EPITAXY OF SILICON - EFFECTS OF HEAVY SB DOPING

被引：26

作者：

KONIG, U

KASPER, E

HERZOG, HJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 52卷 / APR期

关键词：

D O I：

10.1016/0022-0248(81)90185-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：151 / 158

页数：8

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共 20 条

[1] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656
[2] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY
BECKER, GE
BEAN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399
[3] BENDIG H, COMMUNICATION
[4] PROPERTIES OF SCHOTTKY BARRIERS AND P-N-JUNCTIONS PREPARED WITH GAAS AND ALX GA1-XAS MOLECULAR-BEAM EPITAXIAL LAYERS
CHO, AY
CASEY, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1258 - 1263
[5] IMPURITY PROFILES OF GAAS EPITAXIAL LAYERS DOPED WITH SN, SI, AND GE GROWN WITH MOLECULAR-BEAM EPITAXY
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1733 - 1735
[6] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS
CHO, AY
HAYASHI, I
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &
[7] INTERFACE AND DOPING PROFILE CHARACTERISTICS WITH MOLECULAR-BEAM EPITAXY OF GAAS - GAAS VOLTAGE VARACTOR
CHO, AY
REINHART, FK
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1812 - 1817
[8] FREYER J, UNPUBLISHED
[9] EFFECT OF OXYGEN ON ELECTRICAL-PROPERTIES OF SILICON
GLOWINKE, TS
WAGNER, JB
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1977, 38 (09) : 963 - 970
[10] HULTGREN RR, 1962, U CALIFORNIA MINERAL