EVAPORATIVE ANTIMONY DOPING OF SILICON DURING MOLECULAR-BEAM EPITAXIAL-GROWTH

被引：100

作者：

METZGER, RA

ALLEN, FG

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 04期

关键词：

D O I：

10.1063/1.333146

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：931 / 940

页数：10

相关论文

共 31 条

[1] DOPANT INCORPORATION STUDIES IN SILICON MOLECULAR-BEAM EPITAXY (SI MBE)
ALLEN, FG
IYER, SS
METZGER, RA
[J]. APPLICATIONS OF SURFACE SCIENCE, 1982, 11-2 (JUL): : 517 - 527
[2] SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS
BEAN, JC
SADOWSKI, EA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (02): : 137 - 142
[3] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656
[4] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
BEAN, JC
BECKER, GE
PETROFF, PM
SEIDEL, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913
[5] SILICON MBE
BEAN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 769 - 771
[6] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY
BECKER, GE
BEAN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399
[7] ISHIZAKA A, 1982, 2ND P INT S MOL BEAM
[8] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY
IYER, SS
METZGER, RA
ALLEN, FG
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5608 - 5613
[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
PANOUSIS, PT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &
[10] SI-MBE - GROWTH AND SB DOPING
KONIG, U
KIBBEL, H
KASPER, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04): : 985 - 989

← 1 2 3 4 →