SILICON MBE

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743

[3] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[4] BEAN JC, IMPURITY DOPING PROC, pCH4

[5] BEAN JC, 1978, MAY EL SOC M BOST

[6] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[7] VACUUM EVAPORATED SILICON LAYERS FREE FROM STACKING FAULTS [J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (93): : 1597 - &

[8] HALE AP, 1963, VACUUM, V13, P93

[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[10] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (03) : 363 - +

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[2] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743

[3] ARBITRARY DOPING PROFILES PRODUCED BY SB-DOPED SI MBE [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 654 - 656

[4] BEAN JC, IMPURITY DOPING PROC, pCH4

[5] BEAN JC, 1978, MAY EL SOC M BOST

[6] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399

[7] VACUUM EVAPORATED SILICON LAYERS FREE FROM STACKING FAULTS [J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (93): : 1597 - &

[8] HALE AP, 1963, VACUUM, V13, P93

[9] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[10] GROWTH AND STRUCTURE OF SEMICONDUCTING THIN-FILMS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (03) : 363 - +