SILICON MBE APPARATUS FOR UNIFORM HIGH-RATE DEPOSITION ON STANDARD FORMAT WAFERS

被引：66

作者：

BEAN, JC

SADOWSKI, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 02期

关键词：

Compendex;

D O I：

10.1116/1.571347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING SILICON

引用

收藏

页码：137 / 142

页数：6

相关论文

共 20 条

[1] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646
[2] GROWTH OF THIN SILICON FILMS ON SAPPHIRE AND SPINEL BY MOLECULAR-BEAM EPITAXY
BEAN, JC
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 741 - 743
[3] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON
BEAN, JC
BECKER, GE
PETROFF, PM
SEIDEL, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913
[4] LUMINESCENT P-GAAS GROWN BY ZINC ION DOPED MBE
BEAN, JC
DINGLE, R
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 925 - 927
[5] BEAN JC, 1981, DOPING PROCESSES SIL, pCH4
[6] BEAN JC, 1978, MAY EL SOC M BOST
[7] OPERATION OF A CRYOPUMPED UHV SYSTEM
BECKER, GE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 640 - 642
[8] ACCEPTOR DOPANTS IN SILICON MOLECULAR-BEAM EPITAXY
BECKER, GE
BEAN, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) : 3395 - 3399
[9] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +
[10] MOS FIELD-EFFECT TRANSISTOR FABRICATED ON A MOLECULAR-BEAM EPITAXIAL SILICON LAYER
KATAYAMA, Y
SHIRAKI, Y
KOBAYASHI, KLI
KOMATSUBARA, KF
HASHIMOTO, N
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (11) : 740 - 741