MOS FIELD-EFFECT TRANSISTOR FABRICATED ON A MOLECULAR-BEAM EPITAXIAL SILICON LAYER

被引：9

作者：

KATAYAMA, Y

SHIRAKI, Y

KOBAYASHI, KLI

KOMATSUBARA, KF

HASHIMOTO, N

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1979年 / 34卷 / 11期

关键词：

D O I：

10.1063/1.90655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An MOS field-effect transistor which has a buried channel structure and operates in the depletion mode is first fabricated on a molecular-beam epitaxial silicon layer. The field-effect mobility of this MOSFET is comparable to those of the MOSFET's fabricated on conventional single crystals of silicon.

引用

页码：740 / 741

页数：2

共 6 条

[1] TRANSPORT PROPERTIES OF CONDUCTION ELECTRONS IN N-TYPE INVERSION LAYERS IN (100) SURFACES OF SILICON
KOMATSUBARA, KF
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KATAYAMA, Y
KOTERA, N
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (06) : 723 - 740
[2] Matsumoto Y., 1974, JPN J APPL PHYS PT 2, V2-2, P367
[3] NISHIUCHI K, 1978, IEDM TECH DIG, P26
[4] OTA Y, 1977, 1977 IEEE INT EL C W
[5] SEEGER K, 1973, SEMICONDUCTOR PHYSIC, P78
[6] MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES OF SILICON UNDER ULTRAHIGH-VACUUM
SHIRAKI, Y
KATAYAMA, Y
KOBAYASHI, KLI
KOMATSUBARA, KF
[J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 287 - 291

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