MOLECULAR-BEAM AND SOLID-PHASE EPITAXIES OF SILICON UNDER ULTRAHIGH-VACUUM

被引：35

作者：

SHIRAKI, Y

KATAYAMA, Y

KOBAYASHI, KLI

KOMATSUBARA, KF

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90451-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：287 / 291

页数：5

相关论文

共 8 条

[1] SOLID-PHASE TRANSPORT AND EPITAXIAL-GROWTH OF GE AND SI
CANALI, C
MAYER, JW
OTTAVIANI, G
SIGURD, D
VANDERWE.W
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (01) : 3 - 5
[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI
CSEPREGI, L
MAYER, JW
SIGMON, TW
[J]. PHYSICS LETTERS A, 1975, 54 (02) : 157 - 158
[3] SILICON CLEANING WITH HYDROGEN PEROXIDE SOLUTIONS - HIGH ENERGY ELECTRON DIFFRACTION AND AUGER ELECTRON SPECTROSCOPY STUDY
HENDERSON, RC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 772 - +
[4] JONA F, 1967, SURFACES INTERFACES
[5] OTA Y, 1977, J ELECTROCHEM SOC, V124, P1745
[6] SILICON EPITAXY BY SOLID-PHASE CRYSTALLIZATION OF DEPOSITED AMORPHOUS FILMS
ROTH, JA
ANDERSON, CL
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (10) : 689 - 691
[7] LOW-TEMPERATURE EPITAXIAL GROWTH OF DOPED SILICON FILMS AND JUNCTIONS
THOMAS, RN
FRANCOMBE, MH
[J]. SOLID-STATE ELECTRONICS, 1969, 12 (10) : 799 - +
[8] EPITAXIAL GROWTH OF SI ON SI IN ULTRA HIGH VACUUM ( EPITAXIAL TEMPERATURE LESS THAN 550 DEGREES C E )
WIDMER, H
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (05) : 108 - &