EPITAXIAL GROWTH OF SI ON SI IN ULTRA HIGH VACUUM ( EPITAXIAL TEMPERATURE LESS THAN 550 DEGREES C E )

被引：39

作者：

WIDMER, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1964年 / 5卷 / 05期

关键词：

D O I：

10.1063/1.1754072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：108 / &

共 14 条

[1] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J].

ALLEN, FG ;

EISINGER, J ;

HAGSTRUM, HD ;

LAW, JT .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) :1563-1571

[2] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[3] METHOD OF PREPARING SI AND GE SPECIMENS FOR EXAMINATION BY TRANSMISSION ELECTRON MICROSCOPY [J].

BOOKER, GR ;

STICKLER, R .

BRITISH JOURNAL OF APPLIED PHYSICS, 1962, 13 (09) :446-&

[4]

DUSHMAN S, SCIENTIFIC F VACUUM

[5]

HALE AP, 1963, VACUUM, V13, P93

[6] PREPARATION OF EVAPORATED SILICON FILMS [J].

KILGORE, BF ;

ROBERTS, RW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1963, 34 (01) :11-&

[7] LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&

[8] LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].

LANDER, JJ ;

MORRISON, J .

JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&

[9] EPITAXIAL GROWTH OF SILICON BY VACUUM SUBLIMATION [J].

NANNICHI, Y .

NATURE, 1963, 200 (491) :1087-&

[10]

NICOLLIAN EH, 1951, IBM J RES DEVELOP, V1, P349

← 1 2 →