PREPARATION OF EVAPORATED SILICON FILMS

被引：20

作者：

KILGORE, BF

ROBERTS, RW

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1963年 / 34卷 / 01期

关键词：

D O I：

10.1063/1.1718107

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：11 / &

共 10 条

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[3]

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[6]

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[7] THE INTERACTION OF OXYGEN WITH CLEAN SILICON SURFACES [J].

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[8] DISPLACEMENT PROCESSES ON GERMANIUM SURFACES [J].

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[9] EVAPORATION OF SILICON AND GERMANIUM BY RF LEVITATION [J].

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[10] EPITAXIAL GROWTH OF SILICON BY VACUUM EVAPORATION [J].

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