MONTE-CARLO SIMULATIONS OF SI(001) GROWTH AND RECONSTRUCTION DURING MOLECULAR-BEAM EPITAXY

被引：71

作者：

BARNETT, SA

ROCKETT, A

机构：

[1] NORTHWESTERN UNIV,DEPT MAT SCI,EVANSTON,IL 60208

[2] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

[3] UNIV ILLINOIS,DEPT MAT SCI & ENGN,URBANA,IL 61801

来源：

关键词：

D O I：

10.1016/0039-6028(88)90476-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：133 / 150

页数：18

共 34 条

[1] AARTS J, 1986, APPL PHYS LETT, V48, P931, DOI 10.1063/1.96662
[2] ABRAHAM FF, 1985, SURF SCI, V163, pL752, DOI 10.1016/0039-6028(85)91055-6
[3] COMPUTER SIMULATION OF VAPOR DEPOSITION ON 2-DIMENSIONAL LATTICES
ABRAHAM, FF
WHITE, GM
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1841 - &
[4] STUDY OF EPITAXIAL-GROWTH OF DIAMOND-LIKE SEMICONDUCTOR-FILMS BY COMPUTER-SIMULATION
ALEKSANDROV, LN
KOGAN, AN
DYAKONOVA, VI
TROSTINA, NP
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 237 - 243
[5] BARNETT SA, 1985, CRYSTAL GROWTH PHASE, P285
[6] RECENT DEVELOPMENTS IN THE STRAINED LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS
BEAN, JC
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (06): : 1427 - 1429
[7] BISWAS R, 1985, MAT RES SOC S P, V63, P173
[8] COHEN PI, IN PRESS J VACUUM SC
[9] EASTMAN DE, 1980, J VAC SCI TECHNOL, V17, P492, DOI 10.1116/1.570492
[10] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
GHAISAS, SV
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546