RECENT DEVELOPMENTS IN THE STRAINED LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS

被引：37

作者：

BEAN, JC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 06期

关键词：

D O I：

10.1116/1.583468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1427 / 1429

页数：3

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