共 18 条
- [1] ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
- [3] INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1966, 143 (02): : 636 - &
- [5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
- [6] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710
- [7] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140
- [8] EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI [J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1623 - 1633
- [9] JORKE H, 1985, UNPUB P INT S SI MOL
- [10] KASPER E, 1982, APPL PHYS A-MATER, V28, P129, DOI 10.1007/BF00617144