AES, LEED AND TDS STUDIES OF CU ON SI(111)7X7 AND SI(100)2X1

被引：67

作者：

KEMMANN, H

MULLER, F

NEDDERMEYER, H

机构：

来源：

SURFACE SCIENCE | 1987年 / 192卷 / 01期

关键词：

D O I：

10.1016/S0039-6028(87)81158-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：11 / 26

页数：16

共 20 条

[1] EMISSIVITY AT 0.65 MICRON OF SILICON AND GERMANIUM AT HIGH TEMPERATURES [J].

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1510-1511

[2] CHARACTERIZATION OF INTERMIXING AT METAL-SEMICONDUCTOR INTERFACES BY ANGLE-RESOLVED AUGER-ELECTRON EMISSION - CU/SI(111)-7X7 [J].

CHAMBERS, SA ;

HOWELL, GA ;

GREENLEE, TR ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 31 (10) :6402-6410

[3] ATOMIC-STRUCTURE OF THE CU/SI(111) INTERFACE BY HIGH-ENERGY CORE-LEVEL AUGER-ELECTRON DIFFRACTION [J].

CHAMBERS, SA ;

ANDERSON, SB ;

WEAVER, JH .

PHYSICAL REVIEW B, 1985, 32 (02) :581-587

[4] ATOMIC BONDING AT THE SI-AU AND SI-CU INTERFACES [J].

DALLAPORTA, H ;

CROS, A .

SURFACE SCIENCE, 1986, 178 (1-3) :64-69

[5] CU-SI(111) INTERFACES - OXIDATION PROPERTIES IN RELATION WITH THEIR STRUCTURAL-PROPERTIES [J].

DAUGY, E ;

MATHIEZ, P ;

SALVAN, F ;

LAYET, JM ;

DERRIEN, J .

SURFACE SCIENCE, 1985, 152 (APR) :1239-1246

[6] 7X7 SI(111)-CU INTERFACES - COMBINED LEED, AES AND EELS MEASUREMENTS [J].

DAUGY, E ;

MATHIEZ, P ;

SALVAN, F ;

LAYET, JM .

SURFACE SCIENCE, 1985, 154 (01) :267-283

[7] THERMAL CONDUCTIVITY ELECTRICAL RESISTIVITY AND SEEBECK COEFFICIENT OF SILICON FROM 100 TO 1300 DEGREE K [J].

FULKERSON, W ;

MOORE, JP ;

WILLIAMS, RK ;

GRAVES, RS ;

MCELROY, DL .

PHYSICAL REVIEW, 1968, 167 (03) :765-+

[8]

GRANT JT, 1970, SURF SCI, V19, P347

[9] NUCLEATION, GROWTH AND THE INTERMEDIATE LAYER IN AG/SI(100) AND AG SI(111) [J].

HANBUCKEN, M ;

FUTAMOTO, M ;

VENABLES, JA .

SURFACE SCIENCE, 1984, 147 (2-3) :433-450

[10] FORMATION OF NOBLE-METAL SI(100) INTERFACES [J].

HANBUCKEN, M ;

LELAY, G .

SURFACE SCIENCE, 1986, 168 (1-3) :122-132

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