CHARACTERIZATION OF INTERMIXING AT METAL-SEMICONDUCTOR INTERFACES BY ANGLE-RESOLVED AUGER-ELECTRON EMISSION - CU/SI(111)-7X7

被引：27

作者：

CHAMBERS, SA

HOWELL, GA

GREENLEE, TR

WEAVER, JH

机构：

[1] BETHEL COLL,DEPT PHYS,ST PAUL,MN 55112

[2] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.31.6402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6402 / 6410

页数：9

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