EPITAXIAL-GROWTH OF YBCO/MGO/YBCO STRUCTURES

被引:13
作者
TANAKA, S
NAKANISHI, H
MATSUURA, T
HIGAKI, K
ITOZAKI, H
YAZU, S
机构
[1] Itami Research Laboratories, Sumitomo Electric Industries, Ltd., Itami, Hyogo 664
关键词
D O I
10.1109/20.133493
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A Y1Ba2Cu3O7-y (YBCO) /MgO/Y1Ba2Cu3O7-y structure on a MgO(100) substrate was made and its crystallographic structure was investigated by cross-sectional transmission electron microscopy (TEM). A MgO ultra-thin film with (100) orientation as an intermediate layer was obtained on each of the (001) and (100) YBCO thin films at the substrate temperature of about 400-degrees-C. The crystallinity of the MgO layer as a function of the MgO thickness was investigated. The randomness of the crystallinity decreased with a decrease in the thickness. A (100) epitaxial MgO layer without other orientation was obtained at a thickness of 10nm. From the results of cross-sectional TEM observation of the YBCO/MgO/YBCO structure, it was found that the thickness of the MgO can be reduced to 5nm at a minimum. In the sample with a MgO thickness of 5nm, sharp interfaces were observed without any disrupted portion. When the thickness was reduced to 2nm, the interface between the top layer and the base layer was crushed.
引用
收藏
页码:1607 / 1611
页数:5
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