DEVICE CONSIDERATIONS AND MODELING FOR THE DESIGN OF AN INP-BASED MODFET MILLIMETER-WAVE RESISTIVE MIXER WITH SUPERIOR CONVERSION EFFICIENCY

被引：21

作者：

LIN, EW ^{[1
]}

KU, WH ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1995年 / 43卷 / 08期

关键词：

D O I：

10.1109/22.402285

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the device considerations for resistive PET mixer applications and discuss the design and fabrication of an optimized InP-based 0.1 mu m gate length planar-doped pseudomorphic In0.42Al0.58 As/In0.65Ga0.35 As modulation-doped FET (MODFET) well-suited for resistive mixer applications. In addition, we present a general large-signal model suitable for describing the FET in its passive mode of operation to assist in the design and simulation of such mixers, Finally, we discuss the theoretical design of a novel W-band, image-reject resistive mixer based on a large-signal model of our optimized device, The predicted performance of the mixer under +8 dBm of LO drive indicates a minimum conversion loss of 9 dB at 94 GHz, a significant improvement of over 3 dB in comparison to similar GaAs-based mixers, suggesting the potential of InP-based resistive mixer technology to achieve superior conversion loss performance.

引用

页码：1951 / 1959

页数：9