BARRIER OXIDE FILM VS SALT LAYER FORMATION ON BISMUTH IN TARTARIC ACID-SOLUTIONS

被引：13

作者：

BOJINOV, M

KANAZIRSKI, I

GIRGINOV, A

机构：

[1] BULGARIAN ACAD SCI, CENT LAB ELECTROCHEM POWER SOURCES, BU-1113 SOFIA, BULGARIA

[2] CALIMAN CHEM LTD, SOFIA, BULGARIA

来源：

ELECTROCHIMICA ACTA | 1995年 / 40卷 / 05期

关键词：

PHOTOELECTROCHEMISTRY; BARRIER OXIDE FILM; SALT LAYER; ELECTROPHYSICAL CHARACTERISTICS; BISMUTH ELECTRODE;

D O I：

10.1016/0013-4686(94)00378-E

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The anodic oxidation of bismuth metal in aqueous tartaric acid solutions is studied using electrochemical and photoelectrochemical techniques. The oxidation process comprises four stages: active anodic dissolution, primary passivation by a semiconductor oxide layer formation, secondary passivation due to salt layer formation at the oxide film/electrolyte interface and further growth of the oxide sublayer by a high-held transport mechanism. The chemical nature of the salt film was determined by ex-situ X-ray diffraction to be very close to normal bismuth tartrate Bi-2(C4H4O6)(3).6H(2)O. Electrophysical characteristics of the oxide sublayer point to its identification with Bi2O3.

引用

页码：591 / 598

页数：8

共 30 条

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