CONDUCTANCE OF SILICON GRAIN-BOUNDARIES IN AS-GROWN AND ANNEALED BICRYSTALS

被引：19

作者：

POULLAIN, G

MERCEY, B

NOUET, G

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338088

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1547 / 1552

页数：6

共 24 条

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