DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON

The introduction and annealing of defect states in silicon stressed at 770°C in compression have been studied by capacitance transient spectroscopy on Schottky-barrier structures. High-resistivity n-type samples are converted to p type. Low resistivity n-type samples are compensated but recover upon annealing. A large variety of defect states are observed with prominent features at E (0.68) after deformation. The spectra simplify upon annealing at 900°C to two dominant states, E (0.38) and H (0.35).