RECOMBINATION-GENERATION CENTERS CAUSED BY 60 DEGREES-DISLOCATIONS IN SILICON

[1] CORBETT JW, 1966, SOLID STATE PHYSI S7, P70

[2] ELECTRICAL PROPERTIES OF DISLOCATIONS IN SILICON .I. EFFECTS ON CARRIER LIFETIME [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 247 - +

[3] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[4] MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 785 - +

[5] Queisser H. J., 1969, Semiconductor silicon, P585

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[7] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30

[1] CORBETT JW, 1966, SOLID STATE PHYSI S7, P70

[2] ELECTRICAL PROPERTIES OF DISLOCATIONS IN SILICON .I. EFFECTS ON CARRIER LIFETIME [J]. SOLID-STATE ELECTRONICS, 1969, 12 (04) : 247 - +

[3] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[4] MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 785 - +

[5] Queisser H. J., 1969, Semiconductor silicon, P585

[6] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842

[7] ZERBST M, 1966, Z ANGEW PHYSIK, V22, P30