MINORITY CARRIER LIFETIME DETERMINATION FROM INVERSION LAYER TRANSIENT RESPONSE

被引：52

作者：

HOFSTEIN, SR

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 11期

关键词：

D O I：

10.1109/T-ED.1967.16108

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：785 / +

页数：1

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共 5 条

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[2] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR
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[3] PHYSICAL LIMITATIONS ON FREQUENCY RESPONSE OF A SEMICONDUCTOR SURFACE INVERSION LAYER
HOFSTEIN, SR
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[4] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
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[5] LIMITATIONS OF MOS CAPACITANCE METHOD FOR DETERMINATION OF SEMICONDUCTOR SURFACE PROPERTIES
ZAININGER, KH
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) : 179 - +