LIQUID-PHASE EPITAXY OF MISCIBLE AND IMMISCIBLE GAINPAS ALLOYS ON (100)-ORIENTED GAPXAS1-X (X=0, 0.2, 0.4) SUBSTRATES

被引：9

作者：

ISHIKAWA, M ^{[1
]}

ONDA, T ^{[1
]}

OGASAWARA, N ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 108,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

GAINPAS; LIQUID PHASE EPITAXY; IMMISCIBILITY; (100)-ORIENTED GAPAS SUBSTRATE; PHOTOLUMINESCENCE; X-RAY DIFFRACTION; AUGER ELECTRON SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1143/JJAP.29.2332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive study on miscible and immiscible GaInPAs LPE layers grown on (100)-oriented GaAs, GaP0.2As0.8 and GaP0.4As0.6 substrates is presented, including the studies by photoluminescence, X-ray diffraction, cathodoluminescence, Auger electron spectroscopy and transmission electron microscopy. Using three types of substrates with different lattice constants, we have obtained some new insights into the miscibility gap of GaInPAs alloys. It has been demonstrated that GaInPAs LPE layers inside the miscibility gap exhibit composition modulations and show peculiarities in luminescent spectra and X-ray rocking curves, the degree of which varies with layer thickness.

引用

页码：2332 / 2341

页数：10

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