LIQUID-PHASE EPITAXY OF MISCIBLE AND IMMISCIBLE GAINPAS ALLOYS ON (100)-ORIENTED GAPXAS1-X (X=0, 0.2, 0.4) SUBSTRATES

被引：9

作者：

ISHIKAWA, M ^{[1
]}

ONDA, T ^{[1
]}

OGASAWARA, N ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 108,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

GAINPAS; LIQUID PHASE EPITAXY; IMMISCIBILITY; (100)-ORIENTED GAPAS SUBSTRATE; PHOTOLUMINESCENCE; X-RAY DIFFRACTION; AUGER ELECTRON SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

D O I：

10.1143/JJAP.29.2332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A comprehensive study on miscible and immiscible GaInPAs LPE layers grown on (100)-oriented GaAs, GaP0.2As0.8 and GaP0.4As0.6 substrates is presented, including the studies by photoluminescence, X-ray diffraction, cathodoluminescence, Auger electron spectroscopy and transmission electron microscopy. Using three types of substrates with different lattice constants, we have obtained some new insights into the miscibility gap of GaInPAs alloys. It has been demonstrated that GaInPAs LPE layers inside the miscibility gap exhibit composition modulations and show peculiarities in luminescent spectra and X-ray rocking curves, the degree of which varies with layer thickness.

引用

页码：2332 / 2341

页数：10

共 52 条

[41] ELECTROREFLECTANCE AND PHOTOLUMINESCENCE STUDIES OF IN1-XGAXP1-YASY LATTICE-MATCHED TO GAAS [J].

SHIRAKATA, S ;

KONDO, M ;

NISHINO, T ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (03) :435-439

[42] LPE GROWTH OF IN1-XGAXP0.96AS0.04 ON GAAS SUBSTRATE BY 2-PHASE MELT METHOD [J].

SHIRAKATA, S ;

KONDO, M ;

TSUSHI, A ;

NISHINO, T ;

HAMAKAWA, Y ;

KARIYA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (05) :524-529

[43] MISCIBILITY GAPS IN QUATERNARY-III-V ALLOYS [J].

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (01) :194-202

[44] SPINODAL DECOMPOSITION AND CLUSTERING IN III/V ALLOYS [J].

STRINGFELLOW, GB .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (05) :903-918

[45] INSTABILITY OF IN-GA-AS-P LIQUID SOLUTION DURING LOW-TEMPERATURE LPE OF IN1-XGAXAS1-YPY ON INP [J].

TAKAHEI, K ;

NAGAI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) :L313-L316

[46] EFFECT OF LATTICE MISMATCH BETWEEN EPITAXIAL LAYER AND SUBSTRATE ON IMMISCIBILITY OF INGAASP GAAS LPE LAYERS [J].

TANAKA, S ;

HIRAMATSU, K ;

HABU, Y ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1988, 87 (04) :446-452

[47] A VERIFICATION OF IMMISCIBILITY IN INGAASP QUATERNARY ALLOYS [J].

TANAKA, S ;

AMANO, N ;

HIRAMATSU, K ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1988, 92 (1-2) :311-315

[48] THE INITIAL-STAGE OF LPE GROWTH OF INGAASP ON GAAS IN THE REGION OF IMMISCIBILITY [J].

TANAKA, S ;

HIRAMATSU, K ;

HABU, Y ;

SAWAKI, N ;

AKASAKI, I .

JOURNAL OF CRYSTAL GROWTH, 1986, 79 (1-3) :978-983

[49] ON ELASTIC RELAXATION AND LONG WAVELENGTH MICROSTRUCTURES IN SPINODALLY DECOMPOSED INXGA1-XASYP1-Y EPITAXIAL LAYERS [J].

TREACY, MMJ ;

GIBSON, JM ;

HOWIE, A .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1985, 51 (03) :389-417

[50] COMPOSITION-MODULATED STRUCTURES IN INGAASP AND INGAP LIQUID-PHASE EPITAXIAL LAYERS GROWN ON (001) GAAS SUBSTRATES [J].

UEDA, O ;

ISOZUMI, S ;

KOMIYA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (04) :L241-L243

← 1 2 3 4 5 6 →