A VERIFICATION OF IMMISCIBILITY IN INGAASP QUATERNARY ALLOYS

被引:3
作者
TANAKA, S
AMANO, N
HIRAMATSU, K
AKASAKI, I
机构
关键词
like to thank Dr. Y. Toyoda of Matsushita Electric Ind. Co; Ltd; for his help in X-ray measurements. This work was supported in part by the Scientific Research Grant-in-Aid No. 61204007;
D O I
10.1016/0022-0248(88)90463-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
16
引用
收藏
页码:311 / 315
页数:5
相关论文
共 16 条
[1]   THE ROLE OF LATTICE STRAIN IN THE PHASE-EQUILIBRIA OF III-V TERNARY AND QUATERNARY SEMICONDUCTORS [J].
BHATTACHARYA, PK ;
SRINIVASA, S .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5090-5095
[2]   INSTABILITY CRITERIA IN TERNARY AND QUATERNARY-III-V EPITAXIAL SOLID-SOLUTIONS [J].
DECREMOUX, B .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :19-27
[3]  
DECREMOUX B, 1981, I PHYS C SER, V56, P115
[4]   LPE GROWTH OF IN1-XGAXAS1-YPY WITH NARROW PHOTO-LUMINESCENCE SPECTRUM ON GAAS (111)B SUBSTRATES [J].
KATO, T ;
MATSUMOTO, T ;
ISHIDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11) :L667-L669
[5]   INFLUENCE OF IMMISCIBILITY IN LIQUID-PHASE EPITAXY GROWTH OF INGAPAS ON GAAS [J].
KONDO, M ;
SHIRAKATA, S ;
NISHINO, T ;
HAMAKAWA, Y .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3539-3545
[7]  
ONABE K, 1984, NEC RES DEV, P1
[8]   CALCULATION OF MISCIBILITY GAP IN QUATERNARY INGAPAS WITH STRICTLY REGULAR SOLUTION APPROXIMATION [J].
ONABE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (05) :797-798
[9]   LIQUID-SOLID EQUILIBRIUM PHASE-DIAGRAMS FOR III-V-TERNARY SOLID-SOLUTIONS WITH MISCIBILITY GAP [J].
ONABE, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (01) :201-201
[10]   INXGA1-XASYP1-Y ALLOY STABILIZATION BY THE INP SUBSTRATE INSIDE AN UNSTABLE REGION IN LIQUID-PHASE EPITAXY [J].
QUILLEC, M ;
DAGUET, C ;
BENCHIMOL, JL ;
LAUNOIS, H .
APPLIED PHYSICS LETTERS, 1982, 40 (04) :325-326