PHOTO-LUMINESCENT AND ELECTRICAL-PROPERTIES OF INGAP AS MIXED-CRYSTALS LIQUID-PHASE-EPITAXIALLY GROWN ON (100) GAAS

被引：58

作者：

MUKAI, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 05期

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D O I：

10.1063/1.332338

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：2635 / 2645

页数：11

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[1] THE INFLUENCE OF ALLOY SCATTERING ON ELECTRONS AND HOLES IN IN1-XGAXASYP1-Y
ADAMS, AR
HAYES, JR
GREENE, PD
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 315 - 320
[2] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY
ANTYPAS, GA
EDGECUMBE, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 132 - 138
[3] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS
ANTYPAS, GA
MOON, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577
[4] BEBB HB, 1972, SEMICONDUCT SEMIMET, V8, P238
[5] Brooks H., 1955, ADV ELECTRONICS ELEC, P158
[6] NEAR-BAND-GAP ABSORPTION AND PHOTO-LUMINESCENCE OF IN0.53GA0.47AS SEMICONDUCTOR ALLOY
CHEN, YS
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7392 - 7396
[7] DECREMOUX B, 1981, 1980 P INT S GAAS RE, P115
[8] RADIATIVE LIFETIMES OF DONOR-ACCEPTOR PAIRS IN P-TYPE GALLIUM ARSENIDE
DINGLE, R
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 788 - &
[9] PHOTO-LUMINESCENCE OF LATTICE-MATCHED IN1-XGAXP1-YASY LAYERS ON GAAS
KYURAGI, H
SUZUKI, A
MATSUMURA, S
MATSUNAMI, H
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 723 - 724
[10] COMPOSITIONAL DEPENDENCE OF THE ELECTRON-MOBILITY IN IN1-XGAXASYP1-Y
LEHENY, RF
BALLMAN, AA
DEWINTER, JC
NAHORY, RE
POLLACK, MA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 561 - 568

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