THE INFLUENCE OF ALLOY SCATTERING ON ELECTRONS AND HOLES IN IN1-XGAXASYP1-Y

被引：2

作者：

ADAMS, AR ^{[1
]}

HAYES, JR ^{[1
]}

GREENE, PD ^{[1
]}

机构：

[1] STANDARD TELECOMMUN LABS LTD,HARLOW,ESSEX,ENGLAND

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 03期

关键词：

D O I：

10.7567/JJAPS.19S3.315

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：315 / 320

页数：6

共 16 条

[1]

[Anonymous], 1966, SEMICONDUCTORS SEMIM

[2]

Brooks H., 1955, ADV ELECTRON, V7, P85

[3] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS [J].

GREENE, PD ;

WHEELER, SA ;

ADAMS, AR ;

ELSABBAHY, AN ;

AHMAD, CN .

APPLIED PHYSICS LETTERS, 1979, 35 (01) :78-80

[4] MOBILITY OF HOLES IN THE QUATERNARY ALLOY IN1-XGAXASYP1-Y [J].

HAYES, JR ;

ADAMS, AR ;

GREENE, PD .

ELECTRONICS LETTERS, 1980, 16 (08) :282-284

[5]

HERRING C, UNPUBLISHED

[6] PRESSURE COEFFICIENT OF THE DIRECT BAND-GAP OF ALXGA1-XAS FROM OPTICAL-ABSORPTION MEASUREMENTS [J].

LIFSHITZ, N ;

JAYARAMAN, A ;

LOGAN, RA ;

MAINES, RG .

PHYSICAL REVIEW B, 1979, 20 (06) :2398-2400

[7] VELOCITY-FIELD CHARACTERISTICS OF GA1-XINXP1-YASY QUATERNARY ALLOYS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :242-244

[8] ALLOY SCATTERING AND HIGH-FIELD TRANSPORT IN TERNARY AND QUATERNARY 3-5 SEMICONDUCTORS [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH ;

FERRY, DK ;

HARRISON, JW .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :107-114

[9] EXPERIMENTAL-DETERMINATION OF THE EFFECTIVE MASSES FOR GAXIN1-XASYP1-Y ALLOYS GROWN ON INP [J].

NICHOLAS, RJ ;

PORTAL, JC ;

HOULBERT, C ;

PERRIER, P ;

PEARSALL, TP .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :492-494

[10]

PICKERING C, COMMUNICATION

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