DIELECTRIC BEHAVIOR OF GEXSE100-X AND GE22SE68M10 (M = AG, IN, PB, CD) GLASSY ALLOYS

The present paper reports the temperature and frequency dependence of the dielectric constant and the dielectric loss in binary GexSe100-x and ternary Ge22Se68M10 (M = Ag, In, Pb and Cd) glassy alloys in the audio frequency range (0.12-10 kHz). No dielectric dispersion is observed in GexSe100-x glassy alloys. However, in ternary Ge22Se68M10 alloys, dielectric dispersion is observed except in the case of Ge22Se68Ag10. Among these glasses, maximum dielectric loss is observed in the case of Ge22Se68Cd10, which is explained in terms of increase in the density of defect states on incorporation of Cd in binary Ge-Se alloy.