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A NEW ELECTRON-PARAMAGNETIC-RES CENTER DUE TO DISLOCATIONS IN PHOSPHORUS DOPED SILICON

被引：9
作者：
WEBER, E
ALEXANDER, H
机构：
来源：
SOLID STATE COMMUNICATIONS | 1981年 / 37卷 / 05期
关键词：
D O I：
10.1016/0038-1098(81)91208-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：371 / 373
页数：3
相关论文
共 8 条
[1]  
ALEXANDER H, 1975, I PHYS C SER, V23, P433
[2]   DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J].
ELKIN, EL ;
WATKINS, GD .
PHYSICAL REVIEW, 1968, 174 (03) :881-&
[3]   PHOTO-EPR OF DISLOCATIONS IN SILICON [J].
ERDMANN, R ;
ALEXANDER, H .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (01) :251-259
[4]  
KUESTERS KH, 1979, THESIS U KOELN
[5]   EPR STUDIES IN NEUTRON-IRRADIATED SILICON - NEGATIVE CHARGE STATE OF A NONPLANAR 5-VACANCY CLUSTER (V5-) [J].
LEE, YH ;
CORBETT, JW .
PHYSICAL REVIEW B, 1973, 8 (06) :2810-2826
[6]   EPR OF DISLOCATIONS IN SILICON [J].
WEBER, E ;
ALEXANDER, H .
JOURNAL DE PHYSIQUE, 1979, 40 :101-106
[7]  
WEBER E, 1980, S DEFECT INDUCED PHE
[8]   MOBILITY OF PARTIAL DISLOCATIONS IN SILICON [J].
WESSEL, K ;
ALEXANDER, H .
PHILOSOPHICAL MAGAZINE, 1977, 35 (06) :1523-1536
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