SHORT-RANGE ORDER IN SUBMONOLAYER NI ON GAAS(110) BY X-RAY PHOTOELECTRON FORWARD SCATTERING

被引：7

作者：

EGELHOFF, WF

STEIGERWALD, DA

ROWE, JE

BUSSING, TD

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575347

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1495 / 1498

页数：4

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