EFFECTS OF UNIAXIAL STRAIN ON BAND-EDGE OPTICAL TRANSITIONS IN A DIRECT ZINC-BLENDE-STRUCTURE SEMICONDUCTOR

被引：12

作者：

BAILEY, PT

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.1.588

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：588 / &

共 20 条

[1] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS
BOGARDUS, EH
BEBB, HB
[J]. PHYSICAL REVIEW, 1968, 176 (03): : 993 - &
[2] ABSORPTION DUE TO BOUND EXCITONS IN SILICON
DEAN, PJ
FLOOD, WF
KAMINSKY, G
[J]. PHYSICAL REVIEW, 1967, 163 (03): : 721 - &
[3] ERA K, 1968, B AM PHYS SOC, V13, P1476
[4] EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE
FAULKNER, RA
MERZ, JL
DEAN, PJ
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (11) : 831 - &
[5] FREE-CARRIER AND EXCITON RECOMBINATION RADIATION IN GAAS
GILLEO, MA
BAILEY, PT
HILL, DE
[J]. PHYSICAL REVIEW, 1968, 174 (03): : 898 - &
[6] GILLEO MA, TO BE PUBLISHED
[7] GILLEO MA, 1969, J LUMINESCENCE, V1
[8] GILLEO MA, PRIVATE COMMUNICATIO
[9] HAMERMESH M, 1962, GROUP THEORY ITS APP, P134
[10] FINE STRUCTURE IN THE OPTICAL ABSORPTION EDGE OF ANISOTROPIC CRYSTALS
HOPFIELD, JJ
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (1-2) : 97 - 107