EXCITONIC MOLECULE BOUND TO ISOELECTRONIC TRAP NITROGEN IN GALLIUM PHOSPHIDE

被引:13
作者
FAULKNER, RA
MERZ, JL
DEAN, PJ
机构
[1] Bell Telephone Laboratories, Murray Hill, NJ
关键词
D O I
10.1016/0038-1098(69)90772-8
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Two sets of sharp emission lines associated with the photoluminescence spectrum of the isoelectronic trap nitrogen in GaP are unambiguously identified as the recombination radiation of a second exciton bound to this center with an energy of ∼ 10 meV. This is the first observation of an excitonic molecule bound to a defect. © 1969.
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页码:831 / &
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