ELIMINATION OF INTERVALENCE BAND ABSORPTION IN COMPRESSIVELY STRAINED INGAAS/INP 1.5-MU-M MQW LASERS OBSERVED BY HYDROSTATIC-PRESSURE MEASUREMENTS

被引：15

作者：

RING, WS ^{[1
]}

ADAMS, AR ^{[1
]}

THIJS, PJA ^{[1
]}

VANDONGEN, T ^{[1
]}

机构：

[1] PHILIPS OPTOELECTR CTR,5600 JA EINDHOVEN,NETHERLANDS

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 06期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hydrostatic pressure was applied to 1.5-mu-m buried heterostructure In0.8Ga0.2As/InP (1.8% strain) lasers. In contrast to bulk and unstrained MQW devices, no increase in quantum differential efficiency was observed indicating negligible intervalence band absorption. The pressure and temperature variation of the threshold current was explained assuming Auger recombination and a reduced hole mass.

引用

页码：569 / 570

页数：2

共 6 条

[1] BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].